Resonant tunneling diodes are formed using AlN/GaN core-shell nanowireheterostructures grown by plasma assisted molecular beam epitaxy on n-Si(111)substrates. By using a coaxial geometry these devices take advantage ofnon-polar (m-plane) nanowire sidewalls. Device modeling predicts non-polarorientation should enhance resonant tunneling compared to a polar structure andthat AlN double barriers will lead to higher peak-to-valley current ratioscompared to AlGaN barriers. Electrical measurements of ensembles of nanowiresshow negative differential resistance appearing only at cryogenic temperature.Individual nanowire measurements show negative differential resistance at roomtemperature with peak current density of 5*10^5 A/cm^2.
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机译：谐振隧穿二极管是使用通过等离子辅助分子束外延在n-Si（111）衬底上生长的AlN / GaN核-壳纳米线异质结构形成的。通过使用同轴几何形状，这些设备利用了非极性（m平面）纳米线侧壁。器件建模预测，与极性结构相比，非极性取向应增强共振隧穿，并且AlN双势垒将导致与AlGaN势垒相比更高的峰谷电流比。纳米线集合体的电学测量显示仅在低温下才出现负差分电阻。单个纳米线测量在室温下具有5 * 10 ^ 5 A / cm ^ 2的峰值差分电阻。
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